IRL1404 HEXFET Power MOSFET

International Rectifier

Description

www.DataSheet4U.com PD - 93854B IRL1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 1.
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe.

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Datasheet Specifications

Part number: IRL1404
Manufacturer: International Rectifier
File Size: 151.34 KB
Datasheet: IRL1404_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* p Ripple ≤ 5% [ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRL1404 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139)

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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HEXFET Power MOSFET International Rectifier

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