Datasheet Details
- Part number
- IRLBD59N04E
- Manufacturer
- International Rectifier
- File Size
- 158.88 KB
- Datasheet
- IRLBD59N04E_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRLBD59N04E Description
PD -93910 www.datasheet4u.com IRLBD59N04E HEXFET® Power MOSFET VDSS = 40V RDS(on) = 0.018Ω ID = 59A l l l l l l Integrated Temperature Sensing Dio.
The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes.
IRLBD59N04E Features
* 1 - ANODE - D - DRAIN - T2 - CATHODE - S - SOURCE
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 0.52mH
TJ
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