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IRLBD59N04E HEXFET Power MOSFET

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Description

PD -93910 www.datasheet4u.com IRLBD59N04E HEXFET® Power MOSFET VDSS = 40V RDS(on) = 0.018Ω ID = 59A† l l l l l l Integrated Temperature Sensing Dio.
The IRLBD59N04E is a 40V, N-channel HEXFET® power MOSFET with gate protection provided by integrated back to back zener diodes.

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Features

* 1 - ANODE - D - DRAIN - T2 - CATHODE - S - SOURCE Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 0.52mH TJ

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