IRLIB4343 Datasheet - International Rectifier

DIGITAL AUDIO MOSFET

IRLIB4343 Features

* l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive

IRLIB4343 General Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to impro.

IRLIB4343 Datasheet (235.30 KB)

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Datasheet Details

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IRLIB4343

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International Rectifier

File Size:

235.30 KB

Description:

Digital audio mosfet.

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IRLIB4343 DIGITAL AUDIO MOSFET International Rectifier

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IRLIB4343 Features

IRLIB4343 General Description

Datasheet Details

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