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IRLIB4343PBF Datasheet - International Rectifier

DIGITAL AUDIO MOSFET

IRLIB4343PBF Features

* l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetiti

IRLIB4343PBF General Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to impro.

IRLIB4343PBF Datasheet (208.83 KB)

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IRLIB4343PBF

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International Rectifier

File Size:

208.83 KB

Description:

Digital audio mosfet.

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IRLIB4343PBF DIGITAL AUDIO MOSFET International Rectifier

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IRLIB4343PBF Features

IRLIB4343PBF General Description

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