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IRLMS5703 HEXFET Power MOSFET

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Description

PD - 91413E IRLMS5703 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET D 1 6 A D VD.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* Ãhs‡r…Ã!!%! Q6SUÃIVH7@S `Ã2Ã`@6S XÃ2ÃX@@F UPQ GPU 8P9@ ! !! !" !# !$ ((% ((& ((' ((( ! Q6SUÃIVH7@SÃ8P9@ÃS@A@S@I8@) 6Ã2ÃDSGHT (! 7Ã2ÃDSGHT $" 8Ã2ÃDSGHT%&! 9Ã2ÃDSGHT$&" @Ã2ÃDSGHT%'! AÃ2ÃDSGHT#$! BÃ2ÃDSGHT!! CÃ2ÃDSGHT%'" !# !$ !% Y ` a XÃ2Ã!&$!ÃDAÃQS@8@9@9Ã7`Ã6ÃG@

Applications

* The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling inc

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