IRLR2908PbF
International Rectifier
331.85kb
Power mosfet. Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve ex
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IRLR2908 - POWER MOSFET
(International Rectifier)
PD - 94501
AUTOMOTIVE MOSFET
Features
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HEXFET® Power MOSFET
D
IRLR2908 IRLU2908
VDSS = 80V
Advanced Process Technology Ultra Low On-Res.
IRLR2908 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR2908, IIRLR2908
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤28mΩ ·Enhancement mode: ·100% avalanche te.
IRLR2905 - POWER MOSFET
(International Rectifier)
PD- 91334E
IRLR/U2905
HEXFET® Power MOSFET
l l l l l l l
Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU.
IRLR2905 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR2905, IIRLR2905
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche te.
IRLR2905PBF - POWER MOSFET
(International Rectifier)
IRLR/U2905PbF
l l l l l l l l
PD- 95084A
Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced P.
IRLR2905Z - POWER MOSFET
(International Rectifier)
.
IRLR2905Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR2905Z, IIRLR2905Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanch.
IRLR2905ZPBF - POWER MOSFET
(International Rectifier)
PD - 95774B
IRLR2905ZPbF
IRLU2905ZPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperat.
IRLR2905ZTRPBF - N-Channel MOSFET
(VBsemi)
IRLR2905ZTRPBF
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V
ID (A)a 58 56
FEATURE.
IRLR210 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRLR210
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.