Datasheet4U Logo Datasheet4U.com

IRLR2905

POWER MOSFET

IRLR2905 Features

* DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLR/U2905 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3

IRLR2905 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLR2905 Datasheet (138.16 KB)

Preview of IRLR2905 PDF

Datasheet Details

Part number:

IRLR2905

Manufacturer:

International Rectifier

File Size:

138.16 KB

Description:

Power mosfet.
PD- 91334E IRLR/U2905 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU.

📁 Related Datasheet

IRLR2905 N-Channel MOSFET (INCHANGE)

IRLR2905PBF POWER MOSFET (International Rectifier)

IRLR2905Z POWER MOSFET (International Rectifier)

IRLR2905Z N-Channel MOSFET (INCHANGE)

IRLR2905ZPBF POWER MOSFET (International Rectifier)

IRLR2905ZTRPBF N-Channel MOSFET (VBsemi)

IRLR2908 POWER MOSFET (International Rectifier)

IRLR2908 N-Channel MOSFET (INCHANGE)

IRLR2908PbF Power MOSFET (International Rectifier)

IRLR210 Power MOSFET (Fairchild Semiconductor)

TAGS

IRLR2905 POWER MOSFET International Rectifier

Image Gallery

IRLR2905 Datasheet Preview Page 2 IRLR2905 Datasheet Preview Page 3

IRLR2905 Distributor