IRLR2905PBF Datasheet, Mosfet, International Rectifier

IRLR2905PBF Features

• Mosfet 200 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 100 0 VDD = 25V 25 50 75 100 125 150 A 175 V(BR)DSS tp Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche En

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IRLR2905PBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resist

IRLR2905PBF Application

• Applications The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU

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IRLR2905PBF

International Rectifier

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