IRLR2905Z
International Rectifier
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Power mosfet.
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IRLR2905 - POWER MOSFET
(International Rectifier)
PD- 91334E
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Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU.
IRLR2905 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
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·FEATURES ·Static drain-source on-resistance:
RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche te.
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IRLR2905Z - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IRLR2905Z, IIRLR2905Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanch.
IRLR2905ZPBF - POWER MOSFET
(International Rectifier)
PD - 95774B
IRLR2905ZPbF
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l Logic Level
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l 175°C Operating Temperat.
IRLR2905ZTRPBF - N-Channel MOSFET
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N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V
ID (A)a 58 56
FEATURE.
IRLR2908 - POWER MOSFET
(International Rectifier)
PD - 94501
AUTOMOTIVE MOSFET
Features
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HEXFET® Power MOSFET
D
IRLR2908 IRLU2908
VDSS = 80V
Advanced Process Technology Ultra Low On-Res.
IRLR2908 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR2908, IIRLR2908
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤28mΩ ·Enhancement mode: ·100% avalanche te.
IRLR2908PbF - Power MOSFET
(International Rectifier)
PD - 95552A
AUTOMOTIVE MOSFET
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HEXFET® Power MOSFET
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IRLR2908PbF IRLU2908PbF
VDSS = 80V RDS(on) = 28m Ω
Advanced Process Te.
IRLR210 - Power MOSFET
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FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
