IRLR7807Z Datasheet - International Rectifier

IRLR7807Z HEXFET Power MOSFET

PD - 94662 IRLR7807Z IRLU7807Z Applications High Frequency Synchronous Buck Converters for Computer Processor Power Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 13.8mΩ 7.0nC D-Pak IRLR7807Z I-Pak IRLU7807Z Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Contin.

IRLR7807Z Features

* at is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time th

IRLR7807Z Datasheet (164.60 KB)