IRLR7807ZPBF Datasheet - International Rectifier

IRLR7807ZPBF HEXFET Power MOSFET

PD - 95777A IRLR7807ZPbF IRLU7807ZPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l l l HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 13.8mXÃ 7.0nC Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRLR7807Z I-Pak IRLU7807Z www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain.

IRLR7807ZPBF Features

* lified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen f

IRLR7807ZPBF Datasheet (290.83 KB)