IRLZ34N Datasheet - International Rectifier

IRLZ34N N-channel Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLZ34N Features

* Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.DataSheet4U.com IRLZ34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1

IRLZ34N_InternationalRectifier.pdf