IRLZ34L
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Power mosfet. Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon
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IRLZ34 - HEXFET POWER MOSFET
(International Rectifier)
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IRLZ34 - Power MOSFET
(Vishay)
Power MOSFET
IRLZ34, SiHLZ34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
60 VGS = 5.0 V
35
Qgs (nC)
7.1
Qgd (nC)
25
C.
IRLZ34L - HEXFET Power MOSFET
(International Rectifier)
PD - 9.905A
IRLZ34S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175°C .
IRLZ34N - N-channel Power MOSFET
(International Rectifier)
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PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 1.
IRLZ34N - N-Channel MOSFET
(NXP)
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Philips Semiconductors
Product specification
N-channel enhancement mode Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION
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IRLZ34N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRLZ34N， IIRLZ34N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤35mΩ ·Enhancement mo.
IRLZ34NL - N-Channel MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperat.
IRLZ34NLPBF - Power MOSFET
(International Rectifier)
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l l
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C .
IRLZ34NPBF - Power MOSFET
(International Rectifier)
..
PD - 94830
l l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fa.
IRLZ34NS - HEXFET Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperat.
