Datasheet4U Logo Datasheet4U.com

IRLZ34NSPBF - Power MOSFET

📥 Download Datasheet

Preview of IRLZ34NSPBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

IRLZ34NSPBF Product details

Description

HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPbF ® VDSS = 55V RDS(on) = 0.035Ω PD - 95583 G ID = 30A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known f

📁 IRLZ34NSPBF Similar Datasheet

  • IRLZ34L - Power MOSFET (Vishay)
  • IRLZ34S - Power MOSFET (Vishay)
  • IRLZ14 - Power MOSFET (Vishay Siliconix)
  • IRLZ14L - Power MOSFET (Vishay Siliconix)
  • IRLZ14S - Power MOSFET (Vishay)
  • IRLZ20 - N-Channel MOSFET (Samsung Electronics)
  • IRLZ24 - N-Channel MOSFET (Samsung Electronics)
  • IRLZ24A - Advanced Power MOSFET (Samsung Electronics)
Other Datasheets by International Rectifier
Published: |