IRLZ34NPBF

Power MOSFET

International Rectifier

IRLZ34NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLZ34NPBF Datasheet (259.16 KB)

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IRLZ34NPBF

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International Rectifier

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259.16 KB

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Power mosfet.
www.DataSheet4U.com PD - 94830 l l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fa.

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IRLZ34NPBF Power MOSFET International Rectifier

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IRLZ34NPBF General Description

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