Datasheet4U Logo Datasheet4U.com

IRLZ24

Power MOSFET

IRLZ24 Features

* Dynamic dV/dt Rating

* Logic-Level Gate Drive

* RDS(on) Specified at VGS = 4 V and 5 V

* 175 °C Operating Temperature

* Fast Switching

* Ease of Paralleling

* Simple Drive Requirements

* Compliant to RoHS Directive 2002/95/EC Availab

IRLZ24 General Description

Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to ap.

IRLZ24 Datasheet (1.30 MB)

Preview of IRLZ24 PDF

Datasheet Details

Part number:

IRLZ24

Manufacturer:

Vishay ↗

File Size:

1.30 MB

Description:

Power mosfet.
Power MOSFET IRLZ24, SiHLZ24 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18.

📁 Related Datasheet

IRLZ20 N-Channel MOSFET (Samsung Electronics)

IRLZ24 HEXFET POWER MOSFET (International Rectifier)

IRLZ24 N-Channel MOSFET (Samsung Electronics)

IRLZ24A Advanced Power MOSFET (Samsung Electronics)

IRLZ24L Power MOSFET (Vishay Siliconix)

IRLZ24N HEXFET POWER MOSFET (International Rectifier)

IRLZ24N N-Channel MOSFET (INCHANGE)

IRLZ24NL Power MOSFET (International Rectifier)

IRLZ24NLPBF Power MOSFET (International Rectifier)

IRLZ24NPBF Power MOSFET (International Rectifier)

TAGS

IRLZ24 Power MOSFET Vishay

Image Gallery

IRLZ24 Datasheet Preview Page 2 IRLZ24 Datasheet Preview Page 3

IRLZ24 Distributor