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JANSR2N7519T3 - 30V P-Channel MOSFET

JANSR2N7519T3 Description

PD-96899C IRHYS597Z30CM JANSR2N7519T3 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level IRH.
IR HiRel R5 technology provides high performance power MOSFETs for space applications.

JANSR2N7519T3 Features

* Single Event Effect (SEE) Hardened
* Fast Switching
* Low RDS(on)
* Low Total Gate Charge
* Simple Drive Requirements
* Hermetically Sealed
* Electrically Isolated
* Ceramic Eyelets
* Light Weight
* ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute

JANSR2N7519T3 Applications

* These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These

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30V P-Channel MOSFET International Rectifier
International Rectifier JANSR2N7519T3-like datasheet