JANSR2N7519T3 Datasheet, Mosfet, International Rectifier

JANSR2N7519T3 Features

• Mosfet
• Single Event Effect (SEE) Hardened
• Fast Switching
• Low RDS(on)
• Low Total Gate Charge
• Simple Drive Requirements
• Hermetically Se

PDF File Details

Part number:

JANSR2N7519T3

Manufacturer:

International Rectifier

File Size:

0.99MB

Download:

📄 Datasheet

Description:

30v p-channel mosfet. IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both

JANSR2N7519T3 Application

• Applications These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(

TAGS

JANSR2N7519T3

International Rectifier

📁 Related Datasheet

JANSR2N7500U5 - RADIATION HARDENED POWER MOSFET SURFACE MOUNT (International Rectifier)
.. PD - 94325A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) Product Summary Part Number IRHE57133SE Radiation Level 100K Ra.

JANSR2N7520T3 - RADIATION HARDENED POWER MOSFET (International Rectifier)
PD-96911A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary IRHYS597034CM JANSR2N7520T3 60V, P-CHANNEL REF: MIL-PRF-195.

JANSR2N7524T1 - P-CHANNEL POWER MOSFET (International Rectifier)
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 R5 TECHNOL.

JANSR2N7547T3 - RADIATION HARDENED POWER MOSFET (International Rectifier)
PD-94343A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary IRHY597130CM JANSR2N7547T3 100V, P-CHANNEL REF: MIL-PRF-19500/712 5 .

JANSR2N7549T1 - RADIATION HARDENED POWER MOSFET (IRF)
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS597260 100 kRads(Si) IRHMS593260 300 .

JANSR2N7549U2 - P-CHANNEL POWER MOSFET (International Rectifier)
PD-94168E IRHNA597260 JANSR2N7549U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA597260 10.

JANSR2N7550U2 - POWER MOSFET (International Rectifier)
PD-94493D IRHNA597160 JANSR2N7550U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA597160 10.

JANSR2N7583U2 - POWER MOSFET (International Rectifier)
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94342I IRHNA67260 JANSR2N7583U2 200V, N-CHANNEL REF: MIL-PRF-19500/760 R6 TECHNOLOGY Produc.

JANSR2N7583U2A - Radiation Hardened Power MOSFET (International Rectifier)
IRHNS67260 (JANSR2N7583U2A) Radiation Hardened Power MOSFET Surface Mount (SupIR-SMD™) 200V, 56A, N-channel, R6 Technology PD-97907B Features  Sing.

JANSR2N7584T1 - POWER MOSFET (International Rectifier)
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100 kRads(Si) IRHMS63260 300 kR.