JANSR2N7550U2 Datasheet - International Rectifier

JANSR2N7550U2, POWER MOSFET

PD-94493D IRHNA597160 JANSR2N7550U2 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA597160 10.
IR HiRel R5 technology provides high performance power MOSFETs for space applications.

Features

* Single Event Effect (SEE) Hardened
* Ultra Low RDS(on)
* Low Total Gate Charge
* Simple Drive Requiremen

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

JANSR2N7550U2-InternationalRectifier.pdf