JANSR2N7547T3 Datasheet - International Rectifier

JANSR2N7547T3 RADIATION HARDENED POWER MOSFET

PD-94343A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary IRHY597130CM JANSR2N7547T3 100V, P-CHANNEL REF: MIL-PRF-19500/712 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A JANSR2N7547T3 IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A JANSF2N7547T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects.

JANSR2N7547T3 Features

* n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight n ESD Rating: Class 1C per MIL-STD-750, Method Absolute Maximum Ratings Parameter ID @ VGS =

JANSR2N7547T3 Datasheet (169.36 KB)