JANSR2N7520T3 Datasheet - International Rectifier

JANSR2N7520T3 RADIATION HARDENED POWER MOSFET

PD-96911A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary IRHYS597034CM JANSR2N7520T3 60V, P-CHANNEL REF: MIL-PRF-19500/732 5 TECHNOLOGY Part Number IRHNJ597034CM IRHNJ593034CM Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.08Ω 0.08Ω ID -20A -20A QPL Part Number JANSR2N7520T3 JANSF2N7520T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Eve.

JANSR2N7520T3 Features

* TO-257AA n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maxi

JANSR2N7520T3 Datasheet (192.11 KB)