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JANSR2N7584T1 POWER MOSFET

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Description

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100 kRads(Si) IRHMS63260 300 kR.
IR HiRel R6 technology provides high performance power MOSFETs for space applications.

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Features

* Low RDS(on)
* Fast Switching
* Single Event Effect (SEE) Hardened
* Low Total Gate C

Applications

* These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These

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POWER MOSFET International Rectifier
International Rectifier JANSR2N7584T1-like datasheet