JANSR2N7587U3 Datasheet - International Rectifier

JANSR2N7587U3 N-Channel Power MOSFET

IR HiRel R6 technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R.

JANSR2N7587U3 Features

* Single event effect (SEE) hardened

* Low RDS(on)

* Fast switching

* Low total gate charge

* Simple drive requirements

* Hermetically sealed

* Ceramic package

* Surface mount

* ESD rating: Class 1C per MIL-STD-750, Method 1020

JANSR2N7587U3-InternationalRectifier.pdf

JANSR2N7587U3 Datasheet Preview — Preview of JANSR2N7587U3 PDF

Datasheet Details

Part number:

JANSR2N7587U3

Manufacturer:

International Rectifier

File Size:

1.92 MB

Description:

N-channel power mosfet.

📁 Related Datasheet

JANSR2N7587U3 Preliminary 100V N-Channel Radiation-Hardened MOSFET (Microchip)

JANSR2N7583U2 POWER MOSFET (International Rectifier)

JANSR2N7583U2A Radiation Hardened Power MOSFET (International Rectifier)

JANSR2N7584T1 POWER MOSFET (International Rectifier)

JANSR2N7589U3 150V N-Channel MOSFET (Microchip)

JANSR2N7500U5 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (International Rectifier)

JANSR2N7519T3 30V P-Channel MOSFET (International Rectifier)

JANSR2N7520T3 RADIATION HARDENED POWER MOSFET (International Rectifier)

TAGS

JANSR2N7587U3 JANSR2N7587U3 N-Channel Power MOSFET International Rectifier

JANSR2N7587U3 Distributor