JANSR2N7626UB Datasheet, Mosfet, International Rectifier

JANSR2N7626UB Features

• Mosfet
• 5V CMOS and TTL Compatible
• Fast Switching
• Single Event Effect (SEE) Hardened
• Low Total Gate Charge
• Simple Drive Requirements

PDF File Details

Part number:

JANSR2N7626UB

Manufacturer:

International Rectifier

File Size:

1.62MB

Download:

📄 Datasheet

Description:

P-channel power mosfet. IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space

JANSR2N7626UB Application

• Applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features
• 5V CMOS and TTL Comp

TAGS

📁 Related Datasheet

JANSR2N7624U3 - P-CHANNEL POWER MOSFET (International Rectifier)
PD-97302G IRHLNJ797034 JANSR2N7624U3 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL REF: MIL-PRF-19500/757 R7 TE.

JANSR2N7624U3CE - Radiation Hardened Logic level Power MOSFET (International Rectifier)
IRHLNKC797034 (JANSR2N7624U3CE) PD-98015A Radiation Hardened Logic level Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) 60V, -22A, P-channel, R7 T.

JANSR2N7616UB - N-CHANNEL POWER MOSFET (International Rectifier)
PD-95813L IRHLUB770Z4 JANSR2N7616UB RADIATION HARDENED POWER MOSFET SURFACE MOUNT (UB) Product Summary Part Number Radiation Level RDS(on) ID IRHL.

JANSR2N7647U3CE - Radiation Hardened Power MOSFET (International Rectifier)
IRHNKC9A7034 (JANSR2N7647U3CE) Radiation Hardened Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) 60V, 40A, N-channel, R9 Superjunction Technology .

JANSR2N7648U3C - N-CHANNEL POWER MOSFET (International Rectifier)
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) (Ceramic Lid) PD-97911 IRHNJC9A7130 JANSR2N7648U3C 100V, N-CHANNEL R 9 REF: MIL-PRF-19500/775.

JANSR2N7666T1 - Radiation Hardened Power MOSFET (International Rectifier)
IRHMS9A97260 (JANSR2N7666T1) PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Techno.

JANSR2N7261 - REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR (International Rectifier)
PD - 90653B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 100Volt, 0.18Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technol.

JANSR2N7262 - REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR (International Rectifier)
PD - 90672C IRHF7230 IRHF8230 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7262 ® HEXFET TRANSISTOR JANSH2N7262 [REF:MIL-PRF-19500/601] N CHANNEL 200V.

JANSR2N7268U - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features .

JANSR2N7269U - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology PD-90679L Features .