Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides
Features
- 1.0E-06
1.0E-05
1.0E-04 tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current Vs. Pulsewidth
1.0E-01
EAR , Avalanche Energy (mJ)
400
300
200
100
0 25
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www. irf. com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tj.