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IRF4104GPbF - Power MOSFET

IRF4104GPbF Description

PD - 96350 .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRF4104GPbF Applications

* G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Der

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Power MOSFET International Rectifier
International Rectifier IRF4104GPbF-like datasheet