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IRF7324PBF - HEXFET Power MOSFET

IRF7324PBF Description

www.DataSheet4U.com PD - 95460 IRF7324PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance * Dual P-Channel MOSFET * Low Profi.
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico.

IRF7324PBF Applications

* Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation
* Maximum Power Dis

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HEXFET Power MOSFET International Rectifier
International Rectifier IRF7324PBF-like datasheet