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IRF7492 HEXFET Power MOSFET

IRF7492 Description

PD - 94498 IRF7492 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Lo.

IRF7492 Features

* pacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‚ Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A.
* Pulse width ≤ 400µs; duty cycle ≤ 2%. † ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change withou

IRF7492 Applications

* l High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current

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HEXFET Power MOSFET International Rectifier
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