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IRF7492PBF HEXFET Power MOSFET

IRF7492PBF Description

PD - 95287A IRF7492PbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.7.

IRF7492PBF Features

* xed capacitance that gives the same charging time † ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. as Coss while VDS is rising from 0 to 80% VDSS. ‚ Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A.
* Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change w

IRF7492PBF Applications

* l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage

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