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IRFHM830PBF - Power MOSFET

IRFHM830PBF Description

VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 V 3.8 mΩ 15 nC 2.5 Ω 40h A Applications * Battery Operated.

IRFHM830PBF Features

* Features Low RDSon (

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