Datasheet Details
- Part number
- IRFPS3810
- Manufacturer
- International Rectifier
- File Size
- 111.32 KB
- Datasheet
- IRFPS3810_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRFPS3810 Description
PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp.
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFPS3810 Features
* 44]
0.25 [.010]
S ECT ION E-E NOT ES : 1. DIMENSIONING AND T OLERANCING PER ASME Y14.5M-1994. 2. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES] 3. CONT ROLLING DIMENSION: MILLIMET ER 4. OUT LINE CONFORMS T O JEDEC OUT LINE T O-274AA
2.35 [.092] 1.65 [.065]
LEAD ASS IGNMENT S MOS FET 1 - GAT E 2
IRFPS3810 Applications
* Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse
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