Datasheet Details
- Part number
- IRFPS3810PbF
- Manufacturer
- International Rectifier
- File Size
- 169.57 KB
- Datasheet
- IRFPS3810PbF-InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRFPS3810PbF Description
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFPS3810PbF Features
* ations subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903
Visit us at ww
IRFPS3810PbF Applications
* PD - 95703
IRFPS3810PbF
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.009Ω S ID = 170A
Super-247™
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Dr
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