Datasheet Details
- Part number
- IRFPS3815PBF
- Manufacturer
- International Rectifier
- File Size
- 158.00 KB
- Datasheet
- IRFPS3815PBF_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRFPS3815PBF Description
PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating .
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFPS3815PBF Features
* RTERS: 233 Kansas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. irf. com for sales contact information. 09/04
8
www. irf. com
IRFPS3815PBF Applications
* www. DataSheet4U. com
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source V
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