Datasheet4U Logo Datasheet4U.com

IRFR3411 - Power MOSFET

IRFR3411 Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si.

IRFR3411 Applications

* The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Max

📥 Download Datasheet

Preview of IRFR3411 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFR310 - Power MOSFET (Fairchild Semiconductor)
  • IRFR310A - Power MOSFET (Fairchild Semiconductor)
  • IRFR310B - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFR320 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFR320A - Power MOSFET (Samsung)
  • IRFR320B - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFR330 - Power MOSFET (Fairchild Semiconductor)
  • IRFR330A - Power MOSFET (Samsung)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRFR3411-like datasheet

IRFR3411 Stock/Price