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IRFR3411PBF - HEXFET Power MOSFET

IRFR3411PBF Description

PD - 95371A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

IRFR3411PBF Features

* INT ERNATIONAL RECTIFIER LOGO IRFU120 12 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY S IT E CODE ASSEMBLY LOT CODE 8 www. irf. com IRFR/U3411PbF I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches) ) I-Pak (TO-251AA) Pa

IRFR3411PBF Applications

* The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. S ID = 32A

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HEXFET Power MOSFET International Rectifier
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