Datasheet4U Logo Datasheet4U.com

IRFR540ZPbF HEXFET Power MOSFET

IRFR540ZPbF Description

.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRFR540ZPbF Applications

* G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Ther

📥 Download Datasheet

Preview of IRFR540ZPbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFR010 - Transistors (IRF)
  • IRFR014 - Power MOSFET (Vishay)
  • IRFR014A - ADVANCED POWER MOSFET (Fairchild Semiconductor)
  • IRFR020 - (IRFR020 / IRFU020) Power MOSFET (Vishay Siliconix)
  • IRFR024 - Power MOSFET (Vishay Siliconix)
  • IRFR024A - Power MOSFET (Samsung)
  • IRFR024N - Power MOSFET (IRF)
  • IRFR024NPBF - N-Channel MOSFET (INCHANGE)

📌 All Tags

HEXFET Power MOSFET International Rectifier
International Rectifier IRFR540ZPbF-like datasheet