Datasheet4U Logo Datasheet4U.com

ACS30MS - Radiation Hardened 8-Input NAND Gate

Datasheet Summary

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • QML Qualified Per MIL-PRF-38535 Requirements.
  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max. ).
  • . . 3 x 105 RAD(Si) - SEU Immunity.
  • . . . 100MeV/(mg/cm2).
  • Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC).
  • Output Current.

📥 Download Datasheet

Datasheet preview – ACS30MS

Datasheet Details

Part number ACS30MS
Manufacturer Intersil Corporation
File Size 38.50 KB
Description Radiation Hardened 8-Input NAND Gate
Datasheet download datasheet ACS30MS Datasheet
Additional preview pages of the ACS30MS datasheet.

📁 Similar Datasheet

Other Datasheets by Intersil Corporation
  • ACS32MS - Radiation Hardened Quad 2-Input OR Gate
  • ACS373MS - Radiation Hardened Octal Transparent Latch
  • ACS374MS - Radiation Hardened Octal D Flip-Flop
  • ACS00MS - Radiation Hardened Quad 2-Input NAND Gate
  • ACS02MS - Radiation Hardened Quad 2-Input NOR Gate
  • ACS03MS - Radiation Hardened Quad 2-Input NAND Gate
  • ACS04MS - Radiation Hardened Hex Inverter
  • ACS05MS - Radiation Hardened Hex Inverter

Full PDF Text Transcription

Click to expand full text
ACS30MS Data Sheet July 1999 File Number 4759 Radiation Hardened 8-Input NAND Gate The Radiation Hardened ACS30MS is an 8-Input NAND Gate. A HIGH level on all inputs results in a LOW level on the Y output. A LOW level on any input results in a HIGH level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS30MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC).
Published: |