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ACS32MS - Radiation Hardened Quad 2-Input OR Gate

Datasheet Summary

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • QML Qualified Per MIL-PRF-38535 Requirements.
  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Radiation Environment - Latch-Up Free Under any Conditions - Total Dose.
  • . . 3 x 105 RAD (Si) - SEU Immunity.
  • . . . 100MeV/(mg/cm2).
  • Input Logic Levels . . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC).
  • Output Current.
  • .

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Datasheet preview – ACS32MS

Datasheet Details

Part number ACS32MS
Manufacturer Intersil Corporation
File Size 159.15 KB
Description Radiation Hardened Quad 2-Input OR Gate
Datasheet download datasheet ACS32MS Datasheet
Additional preview pages of the ACS32MS datasheet.

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Full PDF Text Transcription

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ACS32MS Data Sheet November 1998 File Number 4545 Radiation Hardened Quad 2-Input OR Gate The Radiation Hardened ACS32MS is a Quad 2-Input OR Gate. For each gate, a HIGH level on either A or B input results in a HIGH level on the Y output. A LOW level on both the A and B inputs results in a LOW level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS32MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types.
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