CD4011BT - CMOS Quad 2-Input NAND Gate

Product Overview

Intersil Corporation

Part number	CD4011BT
Manufacturer	Intersil Corporation
File Size	29.90 KB
Description	CMOS Quad 2-Input NAND Gate
Datasheet	CD4011BT Datasheet
Additional preview pages of the CD4011BT datasheet.

only.

QML Class T, Per MIL-PRF-38535.
Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEP Effective LET > 75 MEV/gm/cm2.
Propagation Delay Time = 60ns (typ. ) at CL = 50pF, VDD = 10V.
Buffered Inputs and Outputs.
Standardized Symmetrical Output Characteristics.
100% Tested for Maximum Quiescent Current at 20V Speciﬁcations Speciﬁcations for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD number.

📁 Similar Datasheet

CD4011B - CMOS NAND Gates (RCA)
CD4011BC - NAND Buffered B Series Gate (National Semiconductor)
CD4011BE - CMOS NAND Gates (Texas Instruments)
CD4011BF - CMOS NAND Gates (Texas Instruments)
CD4011BF3A - CMOS NAND Gates (Texas Instruments)
CD4011BM - NAND Buffered B Series Gate (National Semiconductor)
CD40110B - CMOS Decade Up-Down Counter/Latch/Display Driver (Texas Instruments)
CD40110BE - CMOS Decade Up-Down Counter/Latch/Display Driver (Texas Instruments)

Other Datasheets by Intersil Corporation

Published: Mar 23, 2005 |