FSS430R N-Channel Power MOSFETs

Intersil Corporation

Description

FSS430D, FSS430R June 1998 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

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Datasheet Specifications

Part number: FSS430R
Manufacturer: Intersil Corporation
File Size: 43.67 KB
Datasheet: FSS430R_IntersilCorporation.pdf
Description: N-Channel Power MOSFETs

Features

* 3A, 500V, rDS(ON) = 2.70Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rate

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FSS430R N-Channel Power MOSFETs Intersil Corporation

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