FSTYC9055D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Intersil Corporation

Description

FSTYC9055D, FSTYC9055R TM Data Sheet June 2000 File Number 4755.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Product.

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Datasheet Specifications

Part number: FSTYC9055D
Manufacturer: Intersil Corporation
File Size: 74.87 KB
Datasheet: FSTYC9055D_IntersilCorporation.pdf
Description: Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Features

* 64A, -60V, rDS(ON) = 0.023Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias

Applications

* Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced. The Intersil portfolio of SEGR resistant

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FSTYC9055D Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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