FSTYC9055D Datasheet - Intersil Corporation

FSTYC9055D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSTYC9055D, FSTYC9055R TM Data Sheet June 2000 File Number 4755.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necess.

FSTYC9055D Features

* 64A, -60V, rDS(ON) = 0.023Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias

FSTYC9055D_IntersilCorporation.pdf