FSYA9150D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Intersil Corporation

Description

FSYA9150D, FSYA9150R Data Sheet October 1998 File Number 4582 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operat.

📥 Download Datasheet

FSYA9150D Datasheet Preview — Preview of FSYA9150D PDF

Datasheet Specifications

Part number: FSYA9150D
Manufacturer: Intersil Corporation
File Size: 56.18 KB
Datasheet: FSYA9150D_IntersilCorporation.pdf
Description: Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Features

* 24A, -100V, rDS(ON) = 0.140Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose R

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

FSYA9150D Distributors

📁 Related Datasheet

FSYA450R

📌 All Tags

FSYA9150D Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

Intersil Corporation FSYA9150D-like datasheet