HCTS10MS - Radiation Hardened Triple 3-Input NAND Gate
The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate.
A high on all inputs forces the output to a Low state.
The HCTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.
This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCT
HCTS10MS Features
* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x
* Dose Rate Upset >10 10 1012 RAD (Si
