Datasheet Details
- Part number
- HCTS10MS
- Manufacturer
- Intersil Corporation
- File Size
- 147.99 KB
- Datasheet
- HCTS10MS_IntersilCorporation.pdf
- Description
- Radiation Hardened Triple 3-Input NAND Gate
HCTS10MS Description
HCTS10MS September 1995 Radiation Hardened Triple 3-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP.
The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate.
HCTS10MS Features
* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x
* Dose Rate Upset >10
10
1012
RAD (Si
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