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HCTS10MS - Radiation Hardened Triple 3-Input NAND Gate

HCTS10MS Description

HCTS10MS September 1995 Radiation Hardened Triple 3-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP.
The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate.

HCTS10MS Features

* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x
* Dose Rate Upset >10 10 1012 RAD (Si

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Datasheet Details

Part number
HCTS10MS
Manufacturer
Intersil Corporation
File Size
147.99 KB
Datasheet
HCTS10MS_IntersilCorporation.pdf
Description
Radiation Hardened Triple 3-Input NAND Gate

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Radiation Hardened Triple 3-Input NAND Gate Intersil Corporation
Intersil Corporation HCTS10MS-like datasheet

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