HCTS10MS Datasheet, Gate, Intersil Corporation

HCTS10MS Features

• Gate
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2

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Part number:

HCTS10MS

Manufacturer:

Intersil Corporation

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147.99kb

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📄 Datasheet

Description:

Radiation hardened triple 3-input nand gate. The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HC

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HCTS10MS

Intersil Corporation

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