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HCTS10MS Datasheet - Intersil Corporation

HCTS10MS Radiation Hardened Triple 3-Input NAND Gate

The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCT.

HCTS10MS Features

* 3 Micron Radiation Hardened SOS CMOS

* Total Dose 200K RAD (Si)

* SEP Effective LET No Upsets: >100 MEV-cm2/mg

* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)

* Dose Rate Survivability: >1 x

* Dose Rate Upset >10 10 1012 RAD (Si

HCTS10MS_IntersilCorporation.pdf

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Datasheet Details

Part number:

HCTS10MS

Manufacturer:

Intersil Corporation

File Size:

147.99 KB

Description:

Radiation hardened triple 3-input nand gate.

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HCTS10MS HCTS10MS Radiation Hardened Triple 3-Input NAND Gate Intersil Corporation

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