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HS9-4080ARH-Q - Radiation Hardened Full Bridge N-Channel FET Driver

Datasheet Summary

Description

PIN NUMBER 1 SYMBOL BHB DESCRIPTION B High-side Bootstrap supply.

External bootstrap diode and capacitor are required.

Connect cathode of boot-strap diode and positive side of bootstrap capacitor to this pin.

Features

  • Electrically Screened to SMD # 5962-99617.
  • QML Qualified per MIL-PRF-38535 Requirements.
  • Radiation Environment - Gamma Dose.
  • . . 300kRAD(Si) (Max) - Latch-up Immune RSG DI Process.
  • Drives N-Channel FET Full Bridge Including High Side Chop Capability.
  • Bootstrap Supply Max Voltage to 95VDC.
  • TTL Comparator Input Levels.
  • Drives 1000pF Load with Rise and Fall Times of 50ns.
  • User-Programmable Dead Time.

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Datasheet Details

Part number HS9-4080ARH-Q
Manufacturer Intersil Corporation
File Size 82.69 KB
Description Radiation Hardened Full Bridge N-Channel FET Driver
Datasheet download datasheet HS9-4080ARH-Q Datasheet
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Full PDF Text Transcription

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HS-4080ARH Data Sheet Febuary 2000 File Number 4563.3 Radiation Hardened Full Bridge N-Channel FET Driver The HS-4080ARH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver IC. The device includes a TTL-level input comparator, which can be used to facilitate the “hysteresis” and PWM modes of operation. Its HEN (high enable) lead can force current to freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. The HS-4080ARH is well suited for use in distributed DC power supplies and DC to DC converters, since it can switch at high frequencies.
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