HS9-4423BRH-Q Datasheet PDF - Intersil Corporation Radiation Hardened Dual/ Inverting Power MOSFET Drivers Specs

HS9-4423BRH-Q - Radiation Hardened Dual/ Inverting Power MOSFET Drivers

Datasheet Summary

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

Electrically Screened to DESC SMD # 5962-99511.
QML Qualiﬁed per MIL-PRF-38535 Requirements.
Radiation Environment - Total Dose (Max).
. . . 3 x 105 RAD(SI) - Latch-Up Immune - Low Dose Rate Immune.
IPEAK.
. . . >2A (Typ).
Matched Rise and Fall Times (CL = 4300pF) . . . 75ns (Max).
Low Voltage Lock-Out Feature - HS-4423RH.

Datasheet Details

Part number	HS9-4423BRH-Q
Manufacturer	Intersil Corporation
File Size	56.67 KB
Description	Radiation Hardened Dual/ Inverting Power MOSFET Drivers
Datasheet	HS9-4423BRH-Q Datasheet
Additional preview pages of the HS9-4423BRH-Q datasheet.

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Full PDF Text Transcription

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HS-4423RH, HS-4423BRH Data Sheet June 1999 File Number 4564.4 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V. The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs, like our Rad Hard FS055, in high frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance.

Published: Mar 26, 2005 |