HS9-6617RH Datasheet - Intersil Corporation

HS9-6617RH Radiation Hardened 2K x 8 CMOS PROM

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliab.

HS-6617RH-T Data Sheet July 1999 File Number 4608.1 Radiation Hardened 2K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard ﬂow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HS-6617RH-T is a radiation hardened 16k CMOS PROM, organized in a 2K word by 8-bit forma.

HS9-6617RH Features

* QML Class T, Per MIL-PRF-38535

* Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2

* Field Programmable Nicrome Fuse Links

* Low Standby Power 1.1mW Max

* Low Operating Power 137.5mW/MHz Max

* Fast

HS9-6617RH Datasheet (94.36 KB)