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HS9-6617RH

Radiation Hardened 2K x 8 CMOS PROM

HS9-6617RH Features

* QML Class T, Per MIL-PRF-38535

* Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2

* Field Programmable Nicrome Fuse Links

* Low Standby Power 1.1mW Max

* Low Operating Power 137.5mW/MHz Max

* Fast

HS9-6617RH General Description

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliab.

HS9-6617RH Datasheet (94.36 KB)

Preview of HS9-6617RH PDF

Datasheet Details

Part number:

HS9-6617RH

Manufacturer:

Intersil Corporation

File Size:

94.36 KB

Description:

Radiation hardened 2k x 8 cmos prom.
HS-6617RH-T Data Sheet July 1999 File Number 4608.1 Radiation Hardened 2K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fu.

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HS9-6617RH Radiation Hardened CMOS PROM Intersil Corporation

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