HUF76145S3S Datasheet (Intersil Corporation)

HUF76145S3S, N-Channel MOSFET

HUF76145P3, HUF76145S3S Data Sheet September 1999 File Number 4401.7 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process.

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charg

HUF76145S3S Features

* Logic Level Gate Drive

* 75A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.0045Ω

* Temperature Compensating PSPICE™ Model

* Temperature Compensating SABER Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Curr