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HUF76113SK8
Data Sheet October 1999 File Number 4448.2
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA76113.
HUF76113SK8 Datasheet
