HUF76113SK8 Datasheet - Intersil Corporation

HUF76113SK8 N-Channel MOSFET

HUF76113SK8 Data Sheet October 1999 File Number 4448.2 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed.

HUF76113SK8 Features

* Logic Level Gate Drive

* 6.5A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.030Ω

* Temperature Compensating PSPICE™ Model

* Temperature Compensating SABER Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Curr

HUF76113SK8_IntersilCorporation.pdf

HUF76113SK8 Datasheet Preview — Preview of HUF76113SK8 PDF

Datasheet Details

Part number:

HUF76113SK8

Manufacturer:

Intersil Corporation

File Size:

384.59 KB

Description:

N-channel mosfet.

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