IRF244 Datasheet (Intersil Corporation)

IRF244, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as swi

IRF244 Features

* 14A and 13A, 275V and 250V

* rDS(ON) = 0.28Ω and 0.34Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 275V, 250V DC Rat