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IRF246 N-Channel Power MOSFET

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Description

Semiconductor IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

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Datasheet Specifications

Part number
IRF246
Manufacturer
Intersil Corporation
File Size
70.68 KB
Datasheet
IRF246_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

Features

* 14A and 13A, 275V and 250V
* rDS(ON) = 0.28Ω and 0.34Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* 275V, 250V DC Rat

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. January 1998

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