RFD3055SM Datasheet (Intersil Corporation)

RFD3055SM, N-Channel Power MOSFET

RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 File Number 3648.2 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for

RFD3055SM Features

* 12A, 60V

* rDS(ON) = 0.150Ω

* Temperature Compensating PSPICE® Model

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* 175oC Operating Temperature

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Bo